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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
IXFR40N50Q2
VDSS = 500 V = 29 A ID25 RDS(on) = 0.17
trr 250 ns
Maximum Ratings 500 500 30 40 29 160 40 50 2.5 20 320 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W C C C C N/lb. g
ISOPLUS247 (IXFR) E153432
G
(TAB) D S D = Drain TAB = Isolated
G = Gate S = Source
Features Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 5.0 200 TJ = 25C TJ = 125C 25 1 0.17 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99075B(05/04)
IXFR40N50Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 28 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 680 170 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 2 (External), 13 42 8 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 25 50 0.39 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS247 Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 160 1.5 250 A A V ns C A
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A -di/dt = 100 A/s, VR = 100 V 1 9
Note: Test current IT = 20A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXFR40N50Q2
Fig. 1. Output Characteristics @ 25C
40 35 30 VGS = 10V 8V 7V 6V 90 80 70 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
25 20 15
I D - Amperes
60 50 40 30 20
7V
5.5V 5V
6V
10 5 0 0 1 2 3 4 5 6 7 4.5V
10 0 0 3 6 9 12
5V 15 18 21 24 27 30
V D S - Volts Fig. 3. Output Characteristics @ 125C
40 35 30 VGS = 10V 8V 7V 3.1 2.8 6V VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 20A I D = 40A
I D - Amperes
25 20 15 10
5.5V
5V
4.5V 5 0 0 2 4 6
V D S - Volts
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
Fig. 5. RDS(on) Norm alized to
3.1 2.8
0.5 ID25 Value vs. ID
VGS = 10V TJ = 125C
45 40 35
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0 10 20 30
I D - Amperes
TJ = 25C
30 25 20 15 10 5 0
I D - Amperes
40
50
60
70
80
90
100
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXFR40N50Q2
Fig. 7. Input Adm ittance
50 45 40 50 45 40
Fig. 8. Transconductance
TJ = -40C 25C 125C
g f s - Siemens
35
35 30 25 20 15 10 5 0
I D - Amperes
30 25 20 15 10 5 0 3 3.5 4 4.5 5 5.5 6 6.5 TJ = 125C 25C -40C
0
5
10
15
20
25
30
35
40
45
50
55
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
120 110 100 90 10 9 8 7 VDS = 250V I D = 20A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
80
VG S - Volts
TJ = 25C 0.8 0.9 1 1.1 1.2
70 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 TJ = 125C
6 5 4 3 2 1 0
V S D - Volts
0
10
20
30
40
50
60
70
80
90
100 110
Q G - nanoCoulombs
Fig. 11. Capacitance
10000 f = 1MHz
Fig. 12. Forw ar d-Bias Safe Ope rating Are a
1000 TJ = 150C TC = 25C R DS(on) Lim it
Capacitance - picoFarads
I D - Amperes
C iss
100 25s 100s 10 1m s 10m s DC
1000 C oss
C rss 100 0 5 10 15
1
V D S - Volts
20
25
30
35
40
10
100
1000
V D S - V olts
5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508
IXFR40N50Q2
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
1.00
R ( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000 10000
Pu ls e W id th - millis e c o n d s
(c) 2004 IXYS All rights reserved

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